Metallization induced by nitrogen atom adsorption on silicon nanofilms and nanowires

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Yang, X B ^a   Zhang, R Q ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRIC WIRE; ELECTRONIC PROPERTIES; GAS ADSORPTION; NANOWIRES; NITROGEN;

CONDUCTING PROPERTIES; ENERGY BANDS; FIRST-PRINCIPLES CALCULATIONS; METALLIZATION; NANO-FILMS; NANOELECTRONIC APPLICATIONS; NITROGEN ATOMS; SI NANOSTRUCTURES; SILICON ATOMS; SURFACE ADSORPTIONS; SURFACE-TO-VOLUME RATIOS;

SILICON;

EID: 63049102569     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3098455     Document Type: Article

References (26)

1. D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, Science 0036-8075 10.1126/science.1080313 299, 1874 (2003).
2. Y. Cui and C. M. Lieber, Science 0036-8075 10.1126/science.291.5505.851 291, 851 (2001).
3. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.82.197 82, 197 (1999).
4. X. Y. Zhao, C. M. Wei, L. Yang, and M. Y. Chou, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.236805 92, 236805 (2004).
5. A. M. Morales and C. M. Lieber, Science 0036-8075 10.1126/science.279. 5348.208 279, 208 (1998).
6. Y. F. Zhang, Y. H. Tang, N. Wang, D. P. Yu, C. S. Lee, I. Bello, and S. T. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.121199 72, 1835 (1998).
7. R. Q. Zhang, Y. Lifshitz, and S. T. Lee, Adv. Mater. (Weinheim, Ger.) 15, 636 (2003), and references therein.
8. A. J. Lu, R. Q. Zhang, and S. T. Lee, Nanotechnology 0957-4484 10.1088/0957-4484/19/03/035708 19, 035708 (2008).
9. A. J. Lu, R. Q. Zhang, and S. T. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2936088 92, 203109 (2008).
10. A. J. Lu, R. Q. Zhang, and S. T. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2826267 91, 263107 (2007).
11. K. H. Hong, J. Kim, S. H. Lee, and J. K. Shin, Nano Lett. 1530-6984 10.1021/nl0734140 8, 1335 (2008).
12. Q. S. Li, R. Q. Zhang, and S. T. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2762296 91, 043106 (2007).
13. Q. S. Li, R. Q. Zhang, S. T. Lee, T. A. Niehaus, and Th. Frauenheim, J. Chem. Phys. 0021-9606 10.1063/1.2940735 128, 244714 (2008).
14. Q. S. Li, R. Q. Zhang, S. T. Lee, T. A. Niehaus, and Th. Frauenheim, Appl. Phys. Lett. 0003-6951 10.1063/1.2841674 92, 053107 (2008).
15. M. Nolan, S. O' Callaghan, G. Fagas, J. C. Greer, and Th. Frauenheim, Nano Lett. 1530-6984 10.1021/nl061888d 7, 34 (2007).
16. X. B. Yang and R. Q. Zhang, Appl. Phys. Lett. 0003-6951 10.1063/1.3012372 93, 173108 (2008).
17. R. Rurali and N. Lorente, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 94.026805 94, 026805 (2005).
18. M. V. Fernández-Serra, Ch. Adessi, and X. Blase, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.96.166805 96, 166805 (2006).
19. J. O. Jensen, J. Mol. Struct.: THEOCHEM 588, 175 (2002). 0022-2860
20. R. Q. Zhang, J. Costa, and E. Bertran, Phys. Rev. B 0163-1829 10.1103/PhysRevB.53.7847 53, 7847 (1996).
21. J. W. Kim, H. W. Yeom, K. J. Kong, B. D. Yu, D. Y. Ahn, Y. D. Chung, C. N. Whang, H. Yi, Y. H. Ha, and D. W. Moon, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.90.106101 90, 106101 (2003).
22. J. C. F. Rodríguez-Reyes and A. V. Teplyakov, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76.075348 76, 075348 (2007).
23. G. Kresse and J. Hafner, Phys. Rev. B 0163-1829 10.1103/PhysRevB.49.14251 49, 14251 (1994).
24. G. Kresse and J. Furthmuller, Comput. Mater. Sci. 0927-0256 10.1016/0927-0256(96)00008-0 6, 15 (1996).
25. J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/14/11/302 14, 2745 (2002).
26. R. Q. Zhang, Y. Lifshitz, D. D. D. Ma, Y. L. Zhao, Th. Frauenheim, S. T. Lee, and S. Y. Tong, J. Chem. Phys. 0021-9606 10.1063/1.2047555 123, 144703 (2005).