Effect of boron on solid phase epitaxy of Ge on Si(111) surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4545-4548

  Yamamoto, Tomonori ^a   Ikeda, Makoto ^a   Ezoe, Kenji ^a   Ishii, Kunihiro ^a   Matsumoto, Satoru ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

B; Ge; Heteroepitaxial growth; SPE; Surface diffusion

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

HETEROEPITAXIAL GROWTH; SOLID PHASE EPITAXY (SPE);

SEMICONDUCTING FILMS;

EID: 0034225081     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4545     Document Type: Article

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