Electron microscopy study of surfactant-mediated solid phase epitaxy of Ge on Si(111)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 5 A, 1998, Pages 2460-2467

  Aizawa, Noriyuki ^a   Homma, Yoshikazu ^b   Tomita, Masahito ^b  

^a TOKYO GAKUGEI UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Scanning electron microscopy; Silicon; Solid phase epitaxy; Surfactant; Transmission electron microscopy

Indexed keywords

ELECTRON MICROSCOPY; GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE ACTIVE AGENTS; THIN FILMS;

SURFACTANT-MEDIATED SOLID PHASE EPITAXY;

EPITAXIAL GROWTH;

EID: 0032066135     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2460     Document Type: Article

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