Mechanical properties and reliability of amorphous vs. poly crystalline silicon thin films

Materials Research Society Symposium Proceedings

Volumn 1066, Issue , 2008, Pages 339-344

  Gaspar, Joao ^a   Paul, Oliver ^a   Chu, Virginia ^b   Conde, Joao Pedro ^b,c  

^a UNIVERSITY OF FREIBURG   (Germany)

^b INESC   (Portugal)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

BRITTLENESS; DIAPHRAGMS; FRACTURE; FRACTURE TOUGHNESS; METALLIC FILMS; NANOCRYSTALLINE SILICON; NANOCRYSTALS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; STRAIN; SUBSTRATES; TEMPERATURE; THIN FILMS; WEIBULL DISTRIBUTION;

AMORPHOUS AND NANOCRYSTALLINE SILICON; LOAD-DEFLECTION RESPONSE; LOW-TEMPERATURE SILICONS; MECHANICAL CHARACTERIZATIONS; MECHANICAL PROPERTIES AND RELIABILITIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); POLY-CRYSTALLINE SILICON; POLYCRYSTALLINE SILICON (POLY-SI);

AMORPHOUS SILICON;

EID: 62949245338     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1066-a15-04     Document Type: Conference Paper

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