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Volumn 1070, Issue , 2008, Pages 261-266

A comparison of intrinsic point defect properties in Si and Ge

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; SEMICONDUCTOR DOPING; SILICON WAFERS;

EID: 62949188372     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1070-e06-05     Document Type: Conference Paper
Times cited : (2)

References (18)
  • 3
    • 62949111482 scopus 로고    scopus 로고
    • K. Sueoka, P. Śpiewak and J. Vanhellemont, submitted for publication in J. Electrochem. Soc.
    • K. Sueoka, P. Śpiewak and J. Vanhellemont, submitted for publication in J. Electrochem. Soc.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.