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Volumn 1070, Issue , 2008, Pages 261-266
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A comparison of intrinsic point defect properties in Si and Ge
a
c
Umicore Poland
(Poland)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
SEMICONDUCTOR DOPING;
SILICON WAFERS;
DEFECT FORMATION;
DEVICE PROCESSING;
DOPANT DIFFUSION;
FORMATION ENERGIES;
GETTERING PROCESS;
INTRINSIC POINT DEFECTS;
NUMERICAL CALCULATION;
SEMICONDUCTOR CRYSTALS;
POINT DEFECTS;
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EID: 62949188372
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-1070-e06-05 Document Type: Conference Paper |
Times cited : (2)
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References (18)
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