A comparison of intrinsic point defect properties in Si and Ge

Materials Research Society Symposium Proceedings

Volumn 1070, Issue , 2008, Pages 261-266

  Vanhellemont, Jan ^a   Spiewak, Piotr ^b,c   Sueoka, Koji ^d   Simoen, Eddy ^e   Romandic, Igor ^f  

^a GHENT UNIVERSITY   (Belgium)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c Umicore Poland   (Poland)

^d OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

^e IMEC   (Belgium)

^f UMICORE   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; SEMICONDUCTOR DOPING; SILICON WAFERS;

DEFECT FORMATION; DEVICE PROCESSING; DOPANT DIFFUSION; FORMATION ENERGIES; GETTERING PROCESS; INTRINSIC POINT DEFECTS; NUMERICAL CALCULATION; SEMICONDUCTOR CRYSTALS;

POINT DEFECTS;

EID: 62949188372     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1070-e06-05     Document Type: Conference Paper

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