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Volumn 293, Issue 1-2, 2000, Pages 132-136
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Composition and electronic properties of a-SiGe:H alloys produced from ultrathin layers of a-Si:H/a-Ge:H
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Author keywords
[No Author keywords available]
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Indexed keywords
DEPOSITION;
ENERGY GAP;
FILM PREPARATION;
GLOW DISCHARGES;
HYDROGENATION;
PHOTOCONDUCTIVITY;
SILICON ALLOYS;
OPTICAL BAND GAP;
AMORPHOUS ALLOYS;
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EID: 0342592200
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(00)00524-X Document Type: Article |
Times cited : (10)
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References (13)
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