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Volumn 293, Issue 1-2, 2000, Pages 132-136

Composition and electronic properties of a-SiGe:H alloys produced from ultrathin layers of a-Si:H/a-Ge:H

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ENERGY GAP; FILM PREPARATION; GLOW DISCHARGES; HYDROGENATION; PHOTOCONDUCTIVITY; SILICON ALLOYS;

EID: 0342592200     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(00)00524-X     Document Type: Article
Times cited : (10)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.