Compositional analysis and evolution of defects formed on GaInP epilayers grown on Germanium

Superlattices and Microstructures

Volumn 45, Issue 4-5, 2009, Pages 277-284

  Galiana, Beatriz ^a   Barrigón, Enrique ^a   Rey Stolle, Ignacio ^a   Corregidor, Victoria ^a,b   Espinet, Pilar ^a   Algora, Carlos ^a   Alves, E ^b  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Crystalographic defects; Germanium; III V semiconductors

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECTS; GERMANIUM; III-V SEMICONDUCTORS; INDIUM ALLOYS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

COMPOSITIONAL ANALYSIS; EPILAYERS GROWN; HIGH RESOLUTION X RAY DIFFRACTION; LAYER COMPOSITION; MORPHOLOGICAL STUDY; NUCLEATION LAYERS; RUTHERFORD BACKSCATTERING CHANNELING; TRUNCATED PYRAMIDS;

GALLIUM ALLOYS;

EID: 62949092695     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.12.013     Document Type: Article

References (9)

1. Depuydt B., Theuwis A., and Romandic I. Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers. Materials Science in Semiconductor Processing 9 (2006) 437
2. B. Galiana, K. Volz, I. Rey-Stolle, W. Stolz, C. Algora, Influence of nucleation layers on MOVPE grown GaAs on Ge wafers for concentrator solar cells, in: Proc. of 4th World Conference on Photovoltaic Energy Conversion, 2006
3. Wu P.-H. Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells. Journal of Crystal Growth 298 (2007) 767-771
4. Hudait M., and Krupanidhi S.B. Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: Effect of off-orientation. Materials Research Bulletin 35 6 (2000) 909-919
5. S.A. Ringel, R.M. Sieg, S.M. Ting, E.A. Fitzgerald, Anti-phase domain-free GaAs on Ge substrates grown by MBE for space solar cell applications, in: Proc. 26th PVSC, 1997, pp. 793-798
6. Lazzarini L., Nasi L., Salviati G., Fregonara C.Z., Li Y., Giling L.J., Hardingham C., and Holt D.B. Antiphase disorder in GaAs/Ge heterostructures for solar cells. Micron 31 (2000) 217-222
7. Horcas I., Fernandez R., Gomez-Rodriguez J.M., Colchero J., Gomez-Herrero J., and Baro A.M. WSxM: A software for scanning probe microscopy and a tool for nanotechnology. Review of Scientific Instruments 78 (2007) 013705
8. Barradas N.P., Jeynes C., and Webb R.P. Applied Physics Letters 71 (1997) 291
9. Rey-Stolle I., Barrigón E., Galiana B., and Algora C. Analysis of germanium epiready wafers for III-V heteroepitaxy. Journal of Crystal Growth 310 23 (2008) 4803-4807