Investigation of GaN layer grown on different low misoriented sapphire by MOCVD

Applied Surface Science

Volumn 255, Issue 12, 2009, Pages 6121-6124

  Xing, Yanhui ^a   Han, Jun ^a   Deng, Jun ^a   Li, Jianjun ^a   Xu, Chen ^a   Shen, Guangdi ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Atom force microscopy; Electron back scatter diffraction; Metal organic chemical vapor deposition; Nitrides; Photoluminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; BACKSCATTERING; DIFFRACTION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; IMAGE ENHANCEMENT; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE;

ELECTROLUMINESCENCE INTENSITY; ELECTRON BACK SCATTER DIFFRACTION; FORCE MICROSCOPY; GAN LAYERS; IMAGE QUALITY PARAMETERS; METAL ORGANIC; NON-UNIFORM DISTRIBUTION; OPTICAL AND ELECTRICAL PROPERTIES;

SAPPHIRE;

EID: 62649170614     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.063     Document Type: Article

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