Properties of GaN epilayers grown on misoriented sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Trager Cowan, Carol ^a   McArthur, S ^a   Middleton, P G ^a   O'Donnell, K P ^a   Zubia, D ^b   Hersee, S D ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CAPACITANCE; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; DEPOSITION; HIGH TEMPERATURE EFFECTS; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; NATURAL FREQUENCIES; SEMICONDUCTOR GROWTH;

CRYSTALLINITY; EPITAXIAL LAYERS; GROWTH CONDITIONS; MOLAR RATIO;

GALLIUM NITRIDE;

EID: 4043059236     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001083     Document Type: Article

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