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Volumn , Issue , 2007, Pages 134-137

Estimation of the effect of channel shortening for P-type poly-Si TFTs under AC stress

Author keywords

[No Author keywords available]

Indexed keywords

EXHIBITIONS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THIN FILM TRANSISTORS;

EID: 56049094369     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (6)
  • 1
    • 0042438946 scopus 로고    scopus 로고
    • Impact of low temperature polysilicon on the AMLCD market : Flat panel displays
    • Blake J. G.; Stevens J. D.; Young R.; "Impact of low temperature polysilicon on the AMLCD market : Flat panel displays," Solid state technology, 1998, vol.41, no1, pp. 56-62
    • (1998) Solid state technology , vol.41 , Issue.NO1 , pp. 56-62
    • Blake, J.G.1    Stevens, J.D.2    Young, R.3
  • 2
    • 0038443541 scopus 로고    scopus 로고
    • Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope
    • April
    • Uraoka, Y; Hirai, N.; Yano, H.; Hatayama, T.; Fuyuki, T. "Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope," IEEE Electron Device Letters, v 24, n 4, April, 2003, p 236-238
    • (2003) IEEE Electron Device Letters , vol.24 , Issue.4 , pp. 236-238
    • Uraoka, Y.1    Hirai, N.2    Yano, H.3    Hatayama, T.4    Fuyuki, T.5
  • 3
    • 33750466560 scopus 로고    scopus 로고
    • Study on electrical degradation of p-type low-temperature polycrystalline silicon thin film transistors with C-V measurement analysis
    • Shih-Che Huang, Yu-Han Kao, Ya-Hsiang Tai, "Study on electrical degradation of p-type low-temperature polycrystalline silicon thin film transistors with C-V measurement analysis," Thin Solid Films, 515 (2006) 1206-1209
    • (2006) Thin Solid Films , vol.515 , pp. 1206-1209
    • Huang, S.-C.1    Kao, Y.-H.2    Tai, Y.-H.3
  • 4
    • 0037082075 scopus 로고    scopus 로고
    • Y. Uraoka, H. Yano, T. Hatayama and T. Fuyuki, Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin-Film Transistors under Dynamic Stress, Jpn. J. Appl. Phys. 41 (2002) pp. L 13-L 16 Part 2, No. 1A/B, 15 January 2002
    • Y. Uraoka, H. Yano, T. Hatayama and T. Fuyuki, "Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin-Film Transistors under Dynamic Stress," Jpn. J. Appl. Phys. Vol. 41 (2002) pp. L 13-L 16 Part 2, No. 1A/B, 15 January 2002
  • 5
    • 56049118463 scopus 로고    scopus 로고
    • Observation of electron trapping in p-type polycrystalline silicon thin film transistors due to hot carrier stress employing C-V measurement
    • Kook Chul Moon, Jae-Hoon Lee, Moon-Young Shin and Min-Koo Han, "Observation of electron trapping in p-type polycrystalline silicon thin film transistors due to hot carrier stress employing C-V measurement," proceedings of AMLCD '03, pp. 181-184
    • proceedings of AMLCD '03 , pp. 181-184
    • Chul Moon, K.1    Lee, J.-H.2    Shin, M.-Y.3    Han, M.-K.4
  • 6
    • 0023329786 scopus 로고
    • Hot-Electron-lnduced Punchthrough (HEIP) Effect In Submicrometer PMOSFET's
    • Apr
    • Koyanagi, Mitsumasa ; Lewis, Alan G.; Martin, Russel A.; Huang, Tiao-Yuan; Chen, John Y., "Hot-Electron-lnduced Punchthrough (HEIP) Effect In Submicrometer PMOSFET's," IEEE Transactions on Electron Devices, v ED-34, n 4, Apr, 1987, p 839-844
    • (1987) IEEE Transactions on Electron Devices , vol.ED-34 , Issue.4 , pp. 839-844
    • Koyanagi, M.1    Lewis, A.G.2    Martin, R.A.3    Huang, T.-Y.4    Chen, J.Y.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.