Recombination processes in unintentionally doped GaTe single crystals

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7330-7336

  Zubiaga, A ^a   Garcia J A ^a   Plazaola, F ^a   Munoz Sanjose V ^b   Martinez Tomas M C ^b  

^a UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^b UNIVERSITY OF VALENCIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; EMISSION SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; EXCITONS; INDUCTIVELY COUPLED PLASMA; IONIZATION; QUENCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

RECOMBINATION PROCESSES;

SINGLE CRYSTALS;

EID: 0037115457     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1523144     Document Type: Article

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