Properties of ferroelectric VDF-TrFE copolymer capacitors directly deposited on Si wafers

Journal of the Korean Physical Society

Volumn 52, Issue 1, 2008, Pages 88-91

  Kim, Kwang Ho ^a  

^a Chongju University   (South Korea)

Author keywords

Ferroelectric property; Ferroelectric random access memory; FRAM; Highly and moderately doped si; MFS structure; Polyvinylidene fluoride Trifluoroethylene copolymer; PVDF TrFE

Indexed keywords

EID: 38949144472     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.52.88     Document Type: Article

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