Relation between the dark and photoelectronic properties of microcrystalline silicon

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 2, 2007, Pages 348-351

  Bruggemann R ^a   Badran, R I ^b   Xiong, S ^c  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b HASHEMITE UNIVERSITY   (Jordan)

^c NANKAI UNIVERSITY   (China)

Author keywords

Dark conductivity; Microcrystalline silicon; Mobility lifetime products; Photoconductivity

Indexed keywords

DEPOSITION; FERMI LEVEL; HALL MOBILITY; HOLE MOBILITY; MICROCRYSTALLINE SILICON; PHOTOCONDUCTIVITY;

DARK CONDUCTIVITY; DEPOSITION CONDITIONS; DIFFUSION LENGTH; MAJORITY CARRIERS; MOBILITY-LIFETIME PRODUCTS; PHOTOELECTRONIC PROPERTIES; RECOMBINATION RATE; SUBSTRATE TEMPERATURE;

MICROCRYSTALS;

EID: 38749083458     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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