Investigation of thermal stability and degradation mechanisms in Ni-based ohmic contacts to n-type SiC for high-temperature gas sensors

Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 569-573

  Virshup, Ariel ^a   Porter, Lisa M ^a   Lukco, Dorothy ^b   Buchholt, Kristina ^c   Hultman, Lars ^c   Spetz, Anita Lloyd ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b ASRC Aerospace Corp   (United States)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Degradation mechanism; Nickel contacts; Ohmic contacts; Reliability; Semiconductor contacts; SiC contacts; Stability

Indexed keywords

CONCENTRATION PROFILES; DEGRADATION MECHANISM; ELECTRON ENERGY-LOSS SPECTROSCOPIES; GAS SENSORS; HIGH-TEMPERATURE GAS SENSORS; NON-OHMIC BEHAVIORS; OHMIC BEHAVIORS; SEMICONDUCTOR CONTACTS; SIC CONTACTS; SPECIFIC CONTACT RESISTANCES; TANTALUM SILICIDES; THERMAL STABILITIES;

CHEMICAL SENSORS; CONTACT RESISTANCE; DEGRADATION; DIESEL ENGINES; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTORS; ELECTRON ENERGY LOSS SPECTROSCOPY; GAS DETECTORS; GAS PLANTS; HEATING; NICKEL; NICKEL ALLOYS; OHMIC CONTACTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICIDES; SILICON CARBIDE; TANTALUM; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; TRANSITION METALS;

AUGER ELECTRON SPECTROSCOPY;

EID: 61849151903     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0609-y     Document Type: Conference Paper

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