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Volumn 25, Issue 3, 2009, Pages 1289-1291

Subsurface oxidation for micropatterning silicon (SOMS)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCES; CHEMISTRY LABORATORIES; MICRO-PATTERNING; OXIDATION PROCESS; OXYGEN PRESSURES; PATTERNING TECHNIQUES; PLASMA GENERATORS; RADIO-FREQUENCY PLASMAS; RATIO FEATURES; REACTION CONDITIONS; SILICON SURFACES; STENCIL MASKS; SUBSURFACE OXIDATIONS;

EID: 61849092591     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la803408x     Document Type: Article
Times cited : (4)

References (22)
  • 1
    • 61849142605 scopus 로고    scopus 로고
    • Fundamentals of Microfabrication
    • 2nd ed, Boca Raton, FL
    • Madou, M. J. Fundamentals of Microfabrication, 2nd ed.; UKC ITess: Boca Raton, FL, 2002.
    • (2002) UKC ITess
    • Madou, M.J.1
  • 11
    • 61849097062 scopus 로고    scopus 로고
    • III, J. H. T. J. Vac. Sci. Technoi. B 1989, 7, 1236-1243.
    • III, J. H. T. J. Vac. Sci. Technoi. B 1989, 7, 1236-1243.
  • 14
    • 33748444421 scopus 로고    scopus 로고
    • Godek, M. L.; Malkov, G. S.; Fisher, E. R.; Grainger, D. W. Plasma Process. Polym. 2006, 3, 485-97.
    • Godek, M. L.; Malkov, G. S.; Fisher, E. R.; Grainger, D. W. Plasma Process. Polym. 2006, 3, 485-97.
  • 21
    • 84868891871 scopus 로고    scopus 로고
    • The mean free path, A, is given by X = kTI-j2ap, where a is the collision cross section and p is pressure (upon going from 2 to 0.5 Torr, A increases by a factor of 4, i.e., Λ α 1/p ).
    • The mean free path, A, is given by X = kTI-j2ap, where a is the collision cross section and p is pressure (upon going from 2 to 0.5 Torr, A increases by a factor of 4, i.e., Λ α 1/p ).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.