Characteristics of modified single-defect two-dimensional photonic crystal lasers

IEEE Journal of Quantum Electronics

Volumn 38, Issue 10, 2002, Pages 1353-1365

  Park, Hong Gyu ^a   Hwang, Jeong Ki ^b   Huh, Joon ^a   Ryu, Han Youl ^a   Kim, Se Heon ^a   Kim, Jeong Soo ^a   Lee, Yong Hee ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

FDTD; InGaAsP InP; Microcavity; Photonic band gap; Semiconductor laser; Spontaneous emission factor

Indexed keywords

CRYSTAL DEFECTS; CRYSTALS; ENERGY GAP; FREQUENCY DOMAIN ANALYSIS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TIME DOMAIN ANALYSIS;

PHOTONIC CRYSTAL LASERS;

SEMICONDUCTOR LASERS;

EID: 0036793352     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.802951     Document Type: Article

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