Transient current through a single germanium quantum dot

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 5, 2009, Pages 886-889

  Lai, Wei Ting ^a   Kuo, David M T ^a   Li, Pei Wen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Germanium; Quantum dot; Resonant tunneling diode

Indexed keywords

ELECTRON TUBE DIODES; FREQUENCY DIVIDING CIRCUITS; GERMANIUM; RESONANT TUNNELING; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; TUNNEL DIODES;

CHARGE ACCUMULATIONS; CHARGE TRANSPORTATIONS; DISPLACEMENT CURRENTS; EMISSION PROCESS; QUANTUM DOT; RESONANT ENERGIES; RESONANT TUNNELING DIODE; ROOM TEMPERATURES; SEMICONDUCTOR ELECTRODES; STEADY STATE; TIME DEPENDENTS; TIME-DEPENDENT CURRENTS; TRANSIENT CURRENTS; TRANSITION REGIMES; TUNNEL BARRIERS; TUNNELING CURRENTS; VOLTAGE PULSE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 61649094670     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.12.023     Document Type: Article

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