Defect configurations in Ge-S chalcogenide glasses studied by Raman scattering and positron annihilation technique

Journal of Non-Crystalline Solids

Volumn 355, Issue 7, 2009, Pages 438-440

  Lin, Changgui ^a   Tao, Haizheng ^a   Wang, Zhu ^b   Wang, Bing ^b   Zang, Haochun ^a   Zheng, Xiaolin ^a   Zhao, Xiujian ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

Chalcogenides; Defects; Positron annihilation; Raman scattering

Indexed keywords

CHALCOGENIDES; DEFECTS; ELECTRONS; GERMANIUM; GLASS; PHASE CHANGE MEMORY; POSITRON ANNIHILATION; RAMAN SCATTERING; SCATTERING;

BINARY GLASS; CHALCOGENIDE GLASS; CHEMICAL COMPOSITIONS; COORDINATION DEFECTS; DEFECT CONFIGURATIONS; POSITRON ANNIHILATION LIFETIME SPECTRUM; POSITRON ANNIHILATION TECHNIQUES; POSITRON LIFETIMES; SCATTERING TECHNIQUES; STRUCTURAL FEATURES;

POSITRON ANNIHILATION SPECTROSCOPY;

EID: 61449267605     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2009.01.004     Document Type: Article

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