SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 8, 2002, Pages 571-574

Application of positron annihilation lifetime technique for γ-irradiation stresses study in chalcogenide vitreous semiconductors

(5) Shpotyuk, O a,b Filipecki, J b Golovchak, R a Kovalskiy, A a Hyla, M b

a SCIENTIFIC RESEARCH COMPANY CARAT (Ukraine)

b JAN DLUGOSZ UNIVERSITY (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPOSITION EFFECTS; CRYSTAL DEFECTS; DIAMAGNETISM; DOSIMETRY; GAMMA RAYS; POSITRON ANNIHILATION SPECTROSCOPY; RADIATION EFFECTS; STATISTICAL METHODS; STOICHIOMETRY; STRESS ANALYSIS;

BINARY GLASS SYSTEMS;

SEMICONDUCTING GLASS;

EID: 0036671476 PISSN: 14381656 EISSN: None Source Type: Journal
DOI: 10.1002/1527-2648(20020806)4:8<571::AID-ADEM571>3.0.CO;2-E Document Type: Conference Paper

Times cited : (1)

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