Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

Radiation Measurements

Volumn 42, Issue 4-5, 2007, Pages 712-714

  Kavetskyy, T ^a   Vakiv, M ^a   Shpotyuk, O ^a  

^a Lviv Scientific Research Institute of Materials of SRC Carat   (Ukraine)

Author keywords

Chalcogenide glasses; Charged defects; Positron annihilation; Raman scattering

Indexed keywords

CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; RAMAN SCATTERING; SURFACE DEFECTS;

CHALCOGENIDE GLASSES; CHARGED DEFECTS; POSITRON ANNIHILATION LIFETIME SPECTROSCOPY (PALS);

SEMICONDUCTOR MATERIALS;

EID: 34548283657     PISSN: 13504487     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radmeas.2007.02.059     Document Type: Article

References (7)

1. Boulmetis Y.C., Perakis A., Raptis C., Arsova D., Vateva E., Nesheva D., and Skordeva E. Composition and temperature dependence of the low-frequency Raman scattering in Ge-As-S glasses. J. Non-Cryst. Solids 347 (2004) 187-196
2. Golovchak R.Ya., and Shpotyuk O.I. Radiation-induced bond switching in mixed Ge-As sulphide glasses. Philos. Mag. 85, 25 (2005) 2847-2860
3. 2: resonant Raman and absorption edge spectroscopy combined with ab initio calculations. Philos. Mag. 85, 25 (2005) 2947-2960
4. Kansy J. Microcomputer program for analysis of positron annihilation lifetime spectra. Nucl. Instrum. Methods Phys. Res. A 374 (1996) 235-244
5. Kolobov A., Oyanagi H., Roy A., and Tanaka K. Role of lone-pair electrons in reversible photostructural changes in amorphous chalcogenides. J. Non-Cryst. Solids 227-230 (1998) 710-714
6. Mori T., Matsuishi K., and Arai T. Vibrational properties and network topology of amorphous As-S systems. J. Non-Cryst. Solids 65 (1984) 269-283
7. Shpotyuk O.I., Kovalskiy A.P., Kavetskyy T.S., and Golovchak R.Ya. Threshold restoration effects in γ-irradiated chalcogenide glasses. J. Non-Cryst. Solids 351 (2005) 993-997