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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 1011-1014

Coordination defects in chalcogenide amorphous semiconductors studied by positron annihilation lifetime

(5) Shpotyuk, O I a,b Filipecki, J b Hyla, M b Kovalskiy, A P a Golovchak, R Ya a

a Lviv Scientific Research Institute of Materials of SRC Carat (Ukraine)

b CZESTOCHOWA UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

Chalcogenides; Glasses; Positrons; Semiconductors

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL DEFECTS; GAMMA RAYS; POSITRON ANNIHILATION SPECTROSCOPY; QUENCHING; SEMICONDUCTOR DEVICE MODELS; STOICHIOMETRY; TERNARY SYSTEMS;

CHALCOGENIDE VITREOUS SEMICONDUCTORS; COORDINATION TOPOLOGICAL DEFECTS (CTD);

SEMICONDUCTOR MATERIALS;

EID: 0035678501 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00883-3 Document Type: Article

Times cited : (12)

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