Single crystalline AlN film formed by direct nitridation of sapphire using aluminum oxynitride buffer

Journal of Crystal Growth

Volumn 259, Issue 3, 2003, Pages 302-308

  Nakao, Wataru ^a   Fukuyama, Hiroyuki ^b  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Nitridation; A2. Single crystal growth; B1. aluminum oxynitride; B1. Sapphire

Indexed keywords

CRYSTAL GROWTH; NITRIDING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; ULTRAVIOLET RADIATION;

NITRIDATION;

SEMICONDUCTING FILMS;

EID: 0142095011     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.07.026     Document Type: Article

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