Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 83, Issue 10, 2003, Pages 1921-1922

  Green, R P ^a   Krysa, A ^a   Roberts, J S ^a   Revin, D G ^a,b   Wilson, L R ^a   Zibik, E A ^a   Ng, W H ^a   Cockburn, J W ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; VAPOR PHASE EPITAXY;

QUANTUM CASCADE LASERS;

LASERS;

EID: 0141955760     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1609055     Document Type: Article

References (5)

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2. S. Slivken, C. Jelen, A. Rybaltiwski, J. Diaz, and M. Razeghi, Appl. Phys. Lett. 71, 2593 (1997).
3. For some high performance InP based QCLs, the active regions are grown by MBE, followed by a separate MOVPE regrowth of high thermal conductivity InP upper cladding layers [see for example D. Hofstetter, M. Beck, T. Aellen, J. Faist, U. Oesterle, M. Ilegems, E. Gini, and H. Melchio, Appl. Phys. Lett. 78, 1964 (2001)]. The use of MOVPE for the growth of the whole structure greatly simplifies this procedure.
4. J. S. Roberts, R. P. Green, L. R. Wilson, E. A. Zibik, D. G. Revin, J. W. Cockburn, and R. J. Airey, Appl. Phys. Lett. 82, 4221 (2003).
5. C. Gmachl, F. Capasso, J. Faist, A. L. Hutchinson, A. Tredicucci, D. L. Sivco, J. N. Baillargeon, S. N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. 72, 1430 (1998).