Objective comparison of scanning ion and scanning electron microscope images

Scanning

Volumn 19, Issue 7, 1997, Pages 489-497

  Ishitani, Tohru ^a   Tsuboi, Hideki ^a  

^a HITACHI LTD   (Japan)

Author keywords

Focused ion beam; Monte Carlo simulation; Scanning electron microscope; Scanning ion microscope; Scattering

Indexed keywords

ARTICLE; COMPUTER SIMULATION; CONTRAST SENSITIVITY; ELECTRON BEAM; INTERMETHOD COMPARISON; MICROSCOPE IMAGE; PRIORITY JOURNAL; RADIATION SCATTERING; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; SYSTEM ANALYSIS;

EID: 0031396601     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950190707     Document Type: Article

References (26)

1. Brusilovsky BA: Directional effects in kinetic ion-emission. Vacuum 35, 595-615 (1985)
2. Dearnaley G, Freeman JH, Nelson RS, Stephen J: Ion Implantation. North-Holland Publishers, Amsterdam (1973)
3. Ding ZJ, Shimizu R: A Monte Carlo modeling of electron interaction with solids including cascade secondary electron production. Scanning 18, 92-113 (1996)
4. Gamo K, Namba S: Ion beam assisted etching and deposition. J Vac Sci Technol B8, 1927-1931 (1990)
5. Goldstein JI, Newbury DE, Joy DC, Fiori C, Lifshin E: Scanning Electron Microscopy and X-ray Microanalysis. Plenum Press, New York (1981)
6. Hofer WO: Ion-induced electron emission from solids. Scan Microsc (suppl) 4, 265-310 (1990)
7. Ishitani T: Monte Carlo simulation of ion bombardment at low glancing angles. Jpn J Appl Phys 34, 3303-3306 (1995)
8. Ishitani T, Kaga H: Calculation of local temperature rise in focused-ion-beam sample preparation. J Electron Microsc 44, 331-336 (1995)
9. Ishitani T, Shimase A, Hosaka S: Monte Carlo simulation of energetic ion behavior in amorphous targets. Jpn J Appl Phys 22, 329-334 (1983)
10. Ishitani T, Tsuboi H, Yaguchi T, Koike H: Transmission electron microscope sample preparation using a focused ion beam. J Electron Microsc 43, 322-326 (1994)
11. Ishitani T, Yaguchi T, Koike H: Focused ion beam system for TEM sample preparation. Hitachi Rev 45, 19-24 (1996a)
12. Ishitani T, Yaguchi T: Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction. Microsc Res Techn 35, 1320-333 (1996b)
13. Joy DC: Low voltage scanning electron microscopy. Inst Phys Conf Ser No. 90, 175-180 (1987)
14. Joy DC: An introduction to Monte Carlo simulations. Inst Phys Conf Ser No. 93, 1, 23-32 (1988)
15. Kubena RL, Ward JW, Stratton FP, Joyce RJ, Atkinson GM: A low magnification focused ion beam system with 8 nm spot size. J Vac Sci Technol B 9, 3079-3083 (1991)
16. Melngailis J: Focused ion beam induced deposition: A review. SPIE Proc 1465, 36-49 (1991)
17. Nikawa K: Applications of focused ion beam technique to failure analysis of very large scale integrations: A review. J Vac Sci Technol B 9, 2566-2577 (1991)
18. Nishimura K, Ohya K, Kawata J: Contribution of kinetic and potential emission to keV singly charged on induced electron emission from a metal surface. Jpn J Appl Phys 35, 2284-2289 (1996)
19. Ohya K, Kawata J: Simulation of electron emission from beryllium under electron and ion bombardments. Scan Microsc 9, 331-353 (1995)
20. Olson TK, Lee RG, Morgan JC: Contrast mechanisms in focused ion beam imaging. Proc 18th Int Symp Testing & Failure Analysis, 373-380 (1992)
21. Plies E: Electron optics of low-voltage electron beam testing and inspection. Part I: Simulation tools. Adv Opt Electron Microsc 13, 123-242 (1994)
22. Reimer L: Image Formation in Low-Voltage Scanning Electron Microscopy. SPIE Optical Engineering Press, Washington (1993)
23. Ryssel H, Ruge I: Ion Implantation. John Wiley & Sons, New York (1986)
24. Schou J: Secondary electron emission from solids by electron and proton bombardment. Scan Microsc 2, 607-632 (1988)
25. Steve FA, Shane TC, Kahora PM, Hull R, Bahnck D, Kannan VC, David E: Application of focused ion beams in microelectronics production, design, and development. Surf Interface Anal 23, 61-68 (1995)
26. Tamura H: Analysis of insulating materials by negative ion microprobe. Sinku (Vacuum) 26, 179-188 (1983) (in Japanese)