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Volumn 48, Issue 2, 2009, Pages
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Enhancement of exciton-phonon interaction in InGaN quantum wells induced by electron-beam irradiation
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Author keywords
[No Author keywords available]
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
ELECTRON BEAMS;
ELECTRON IRRADIATION;
ELECTRONS;
EXCITONS;
INDIUM;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
ORGANIC CHEMICALS;
PHONONS;
SEMICONDUCTOR QUANTUM WIRES;
SMELTING;
WELLS;
ELECTRON-BEAM;
ELECTRON-BEAM IRRADIATIONS;
EXCITON-PHONON COUPLINGS;
EXCITON-PHONON INTERACTIONS;
EXPOSURE-TIME;
INDIUM CONCENTRATIONS;
INGAN QUANTUM WELLS;
INGAN/GAN;
INGAN/GAN QUANTUM WELLS;
IRRADIATED SAMPLES;
LONGITUDINAL OPTICAL PHONONS;
LOW ENERGIES;
METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS;
MULTIPLE QUANTUM WELLS;
RED SHIFTS;
TEMPERATURE DEPENDENTS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 60849132474
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.48.021001 Document Type: Article |
Times cited : (6)
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References (17)
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