Study of geometric effect on phase change random access memory

2005 Non-Volatile Memory Technology Symposium, NVMTS05

Volumn , Issue , 2005, Pages 110-114

  Zhao, R ^a   Chong, T C ^a   Shi, L P ^a   Tan, P K ^a   Lim, K G ^a   Yang, H X ^a   Lee, H K ^a   Hu, X ^a   Li, J M ^a   Miao, X S ^a   Wei, X Q ^a   Wang, W J ^a   Song, W D ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

Author keywords

Cell characteristics; Chalcogenide; Nonvolatile Memory (NVM); Phase Change RAM (PCRAM)

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC BATTERIES; ELECTRIC CURRENTS; NONVOLATILE STORAGE; PHASE SHIFTERS; THERMODYNAMIC PROPERTIES;

CELL CHARACTERISTICS; CHALCOGENIDE; GEOMETRIC EFFECT; PHASE CHANGE RANDOM ACCESS MEMORY;

RANDOM ACCESS STORAGE;

EID: 33749411640     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2005.1541415     Document Type: Conference Paper

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