Analysis of microwave absorption caused by free carriers in silicon

Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

  Sameshima, Toshiyuki ^a   Hayasaka, Hiromi ^a   Haba, Tomonori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CARRIER LIFETIME; HEAT TREATING FURNACES; HEAT TREATMENT; MICROWAVES; PASSIVATION; SILICON COMPOUNDS; VACUUM; VACUUM EVAPORATION; VAPORS;

ABSORPTION THEORIES; CARRIER GENERATIONS; FREE CARRIERS; LIGHT ILLUMINATIONS; MICROWAVE ABSORPTIONS; MICROWAVE INTERFEROMETERS; MINORITY CARRIER LIFETIMES; P-TYPE SILICONS; PHOTO ABSORPTIONS; PHOTO-INDUCED; RECOMBINATION VELOCITIES; SILICON SUBSTRATES; TRANSMISSIVITY; VACUUM EVAPORATION METHODS;

SILICON;

EID: 60849122845     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.021204     Document Type: Article

References (12)

1. K. Sakamoto and T. Samehima: Jpn. J. Appl. Phys. 39 (2000) 2492.
2. M. J. Kerr and A. Cuevas: Semicond. Sci. Tcchnol. 17 (2002) 166.
3. J. M. Borrego, R. J. Gutmann, N. Jensen, and O. Paz: Solid-Sate Electron. 30 (1987) 195.
4. G. S. Kousik, Z. G. Ling, and P. K. Ajmera: J. Appl. Phys. 72 (1992) 141.
5. T. Sameshima and M. Satoh: Jpn. J. Appl. Phys. 36 (1997) L687.
6. H. Engstrom: J. Appl. Phys. 51 (1980) 5245.
7. T. Sameshima, K. Saitoh, N. Aoyama, S. Higashi, M. Kondo, and A. Matsuda: Jpn. J. Appl. Phys. 38 (1999) 1892.
8. J. C. Irvin: Bell Syst. Tech. J. 41 (1962) 387.
9. K. Asada, K. Sakamoto, T. Watanabe, T. Sameshima, and S. Higashi: Jpn. J. Appl. Phys. 39 (2000) 3883.
10. M. Born and E. Wolf: Principles of Optics (Pergamon, New York, 1974) Chaps. 1 and 13.
11. A. S. Grove: Physics and Technology of Semiconductor Devices (Wiley, New York, 1967) Chap. 5.
12. A. G. Aberle, G. Heiser, and M. A. Green: J. Appl. Phys. 75 (1994) 5391.