Flip motion of heterogeneous buckled dimers on Ge(0 0 1) by electron injection from STM tip

Surface Science

Volumn 603, Issue 5, 2009, Pages 781-787

  Tomatsu, Kota ^a   Yan, Binghai ^b,c   Yamada, Masamichi ^a   Nakatsuji, Kan ^a   Zhou, Gang ^b   Duan, Wenhui ^b   Komori, Fumio ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TSINGHUA UNIVERSITY   (China)

^c UNIVERSITY OF BREMEN   (Germany)

Author keywords

Atomistic dynamics; Germanium; Scanning tunneling microscopy; Silicon; Tin

Indexed keywords

ATOMS; DIMERS; DYNAMICS; ELECTRONIC STATES; GERMANIUM; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; TIN; TITANIUM COMPOUNDS;

ATOMISTIC DYNAMICS; ELEMENTARY PROCESS; ENERGY THRESHOLDS; FIRST-PRINCIPLES CALCULATIONS; GE(0 0 1); LOCALIZED ELECTRONIC STATE; RESONANT SCATTERINGS; SURFACE MOTIONS; TOPOLOGICAL DEFECTS;

SURFACE ANALYSIS;

EID: 60849121418     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.01.017     Document Type: Article

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