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Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

Investigation of C60 epitaxial growth mechanism on GaAs substrates

(3) Nishinaga, Jiro a Kawaharazuka, Atsushi b Horikoshi, Yoshiji a

a WASEDA UNIVERSITY (Japan)

b WASEDA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOTION ESTIMATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES;

ADSORPTION SITES; ANOMALOUS OSCILLATIONS; GAAS; GAAS SUBSTRATES; INITIAL STAGES; INTENSITY OSCILLATIONS; LAYER GROWTHS; MONOLAYER COVERAGES; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONS; SCANNING TUNNEL MICROSCOPIES; STEP-FLOW GROWTHS;

GALLIUM ALLOYS;

EID: 60849095797 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.025502 Document Type: Article

Times cited : (10)

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