MBE/MEE growth and characterization of C60-doped GaAs

Journal of Crystal Growth

Volumn 227, Issue 228, 2001, Pages 93-97

  Zhan, H H ^a   Horikoshi, Y ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

A1. Characterization; A3. Migration enhanced epitaxy; A3. Molecular beam epitaxy; B1. Arsenates; B2. Semiconducting gallium arsenide

Indexed keywords

FULLERENES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM ARSENIDE; MIGRATION ENHANCED EPITAXY (MEE);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035398080     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00639-X     Document Type: Article

References (3)