Nanoscale selective area epitaxy of C60 crystals on GaAs by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1587-1590

  Nishinaga, Jiro ^a   Aihara, Tomoyuki ^a   Toda, Takeshi ^a   Matsutani, Fumio ^a   Horikoshi, Yoshiji ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; CRYSTALS; ISOTOPES; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS; X RAY DIFFRACTION;

C60 DEPOSITION; EPITAXIAL ORIENTATION; FOURFOLD SYMMETRY; NANOSCALE STRUCTURES;

FULLERENES;

EID: 33744800007     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2198857     Document Type: Article

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