Selective growth of C60 layers on GaAs and their crystalline characteristics

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 323-326

  Nishinaga, Jiro ^a   Ogawa, Masaaki ^a   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Area selective epitaxy; C60 films; GaAs; MBE; RHEED; X ray diffraction

Indexed keywords

CARBON; EPITAXIAL GROWTH; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

AREA SELECTIVE EPITAXY; C60 FILMS; DIFFRACTION PATTERNS; GAAS;

CRYSTALLOGRAPHY;

EID: 4544234445     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.108     Document Type: Article

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