SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 1, 2008, Pages

Molecular layer-by-layer growth of C60 thin films by continuous-wave infrared laser deposition

(9) Yaginuma, Seiichiro a,b Itaka, Kenji b,c Haemori, Masamitsu d Katayama, Masao a,c Ueno, Keiji e Ohnishi, Tsuyoshi b Lippmaa, Mikk b Matsumoto, Yuji a,c Koinuma, Hideomi b,c,d

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b UNIVERSITY OF TOKYO (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

d NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

e SAITAMA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINATORIAL MATHEMATICS; COMBINATORIAL OPTIMIZATION; ELECTRON DIFFRACTION; FILMS; GROWTH (MATERIALS); HIGH ENERGY ELECTRON DIFFRACTION; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; MOTION ESTIMATION; OXIDE FILMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; THICK FILMS; THIN FILMS;

DEPOSITION METHODS; EXPERIMENTAL CONDITIONS; FILM DEPOSITIONS; FILM FABRICATIONS; INFRARED LASERS; KEY FACTORS; LAYER BY LAYERS; LAYER THICKNESSES; MOLECULAR LAYERS; MOLECULAR SOLIDS; OXIDE THIN FILMS; RHEED INTENSITY OSCILLATIONS; SEMI-CONDUCTORS; SYSTEM DESIGNS;

FILM GROWTH;

EID: 57049104631 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.015005 Document Type: Article

Times cited : (38)

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