Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

Applied Physics Letters

Volumn 74, Issue 13, 1999, Pages 1895-1897

  Matulionis, A ^a   Aninkevicius V ^a   Liberis, J ^a   Matulioniene, I ^a   Berntgen, J ^b   Heime, K ^b   Hartnagel, H L ^c  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL RELAXATION; CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; ELECTRON GAS; HOT CARRIERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

HOT ELECTRON ENERGY RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0345202297     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123705     Document Type: Article

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