Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques

Journal of Crystal Growth

Volumn 311, Issue 4, 2009, Pages 1117-1122

  Kakehi, Yoshiharu ^a   Satoh, Kazuo ^a   Yotsuya, Tsutom ^a   Masuko, Keiichiro ^b   Yoshimura, Takeshi ^b   Ashida, Atsushi ^b   Fujimura, Norifumi ^b  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

A1. Characterization; A3. Laser epitaxy; B1. Oxides; B2. Semiconducting ternary compounds

Indexed keywords

ACTIVATION ENERGY; BIOACTIVITY; CARRIER CONCENTRATION; CORUNDUM; CRYSTAL SYMMETRY; ELECTRIC CONDUCTIVITY; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; SAPPHIRE; SULFUR COMPOUNDS; TERNARY ALLOYS; TERNARY SYSTEMS;

A-PLANE SAPPHIRES; A1. CHARACTERIZATION; A3. LASER EPITAXY; B1. OXIDES; B2. SEMICONDUCTING TERNARY COMPOUNDS; BASAL PLANES; DOMAIN STRUCTURES; ELECTRICAL CONDUCTIVITIES; HALL MEASUREMENTS; INFRARED REGIONS; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL TRANSMITTANCES; ORIENTATION RELATIONSHIPS; P-TYPE CONDUCTIONS; POST-ANNEALING; RHOMBOHEDRAL CRYSTALS; ROOM TEMPERATURES; ROTATIONAL SYMMETRIES; TEMPERATURE DEPENDENCES; TWO-STEP DEPOSITIONS;

OPTICAL FILMS;

EID: 60649116626     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.060     Document Type: Article

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