Statistical variations in 32nm thin-body SOI devices and SRAM cells

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 389-392

  Cheng, B ^a   Roy, S ^a   Brown, A ^a   Millar, C ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CHARACTERISTICS; DEVICE SIMULATIONS; EDGE ROUGHNESS; SIMULATION RESULTS; SOI DEVICES; SOI TECHNOLOGIES; SRAM CELLS; STATISTICAL VARIABILITIES; STATISTICAL VARIATIONS; THIN BODIES;

INTEGRATED CIRCUITS;

STATIC RANDOM ACCESS STORAGE;

EID: 60649114155     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734546     Document Type: Conference Paper

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