HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high-performance nonvolatile memory device applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 A, 2007, Pages 1803-1807

  Maikap, Siddheswar ^a   Tzeng, Pei Jer ^b   Wang, Ting Yu ^c   Lee, Heng Yuan ^b   Lin, Cha Hsin ^b   Wang, Ching Chiun ^b   Lee, Lurng Shehng ^b   Yang, Jer Ren ^c   Tsai, Ming Jinn ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Al2O3; Flash; HfAlO; HfO2; High ; Nanolaminate charge trapping; Nonvolatile memory

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITORS; CHARGE TRAPPING; HAFNIUM COMPOUNDS; NONVOLATILE STORAGE;

CHARGE TRAPPING LAYERS; MEMORY CAPACITORS; NANOLAMINATE CHARGE TRAPPING;

NANOSTRUCTURED MATERIALS;

EID: 34547346283     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1803     Document Type: Article

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