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Volumn 12, Issue 7, 2004, Pages 539-552

Fast, contactless and spatially resolved measurement of sheet resistance by an infrared method

Author keywords

Four point probing; Free carrier absorption; IR measurement methods; Selective emitter; Sheet resistance; Solar cell characterization

Indexed keywords

ABSORPTION; CAMERAS; CHARGE COUPLED DEVICES; INFRARED RADIATION; METALLIZING; SEMICONDUCTOR DEVICES;

EID: 6044230802     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.548     Document Type: Article
Times cited : (18)

References (17)
  • 2
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    • Valdes LB. Resistivity measurement on germanium for transistors. IRE Proceedings 1954; 42: 420.
    • (1954) IRE Proceedings , vol.42 , pp. 420
    • Valdes, L.B.1
  • 4
    • 0015771906 scopus 로고
    • Nondestructive and contactless sheet resistance and junction depth measurements by infrared transmission through the diffusion
    • Chicago, 13-18 May
    • Tong AH. Nondestructive and contactless sheet resistance and junction depth measurements by infrared transmission through the diffusion. Proceedings of be Spring-Meeting to be Electrochemical Society on Semiconductor Silicon, Chicago, 13-18 May 1973; 596.
    • (1973) Proceedings of Be Spring-meeting to be Electrochemical Society on Semiconductor Silicon , pp. 596
    • Tong, A.H.1
  • 9
    • 2142771771 scopus 로고    scopus 로고
    • Free carrier absorption in heavily doped silicon layers
    • Isenberg J, Warta W. Free carrier absorption in heavily doped silicon layers. Applied Physics Letter 2004; 84(13): 2265.
    • (2004) Applied Physics Letter , vol.84 , Issue.13 , pp. 2265
    • Isenberg, J.1    Warta, W.2
  • 11
    • 0037391034 scopus 로고    scopus 로고
    • Lifetime measurements by Carrier Density Imaging (GDI) measurement principles and first applications
    • Isenberg J, Riepe S, Glunz SW, Warta W. Lifetime measurements by Carrier Density Imaging (GDI) measurement principles and first applications. Journal Applied Physics 2003; 93(7): 4268.
    • (2003) Journal Applied Physics , vol.93 , Issue.7 , pp. 4268
    • Isenberg, J.1    Riepe, S.2    Glunz, S.W.3    Warta, W.4
  • 12
    • 0141921365 scopus 로고    scopus 로고
    • Spatially resolved lifetime imaging of silicon wafers by measurement of infrared emission
    • Schubert M, Isenberg J, Warta W. Spatially resolved lifetime imaging of silicon wafers by measurement of infrared emission. Journal Applied Physics 2003; 94(6): 4139.
    • (2003) Journal Applied Physics , vol.94 , Issue.6 , pp. 4139
    • Schubert, M.1    Isenberg, J.2    Warta, W.3
  • 14
    • 0009509593 scopus 로고
    • Carrier mobilities in silicon empirically related to doping and field
    • Caughey DM, Thomas RE. Carrier mobilities in silicon empirically related to doping and field. IEEE Proceedings 1967; 52: 2192.
    • (1967) IEEE Proceedings , vol.52 , pp. 2192
    • Caughey, D.M.1    Thomas, R.E.2
  • 15
    • 0020783138 scopus 로고
    • Modelling of carrier mobility against carrier concentration in arsenic-, phosphourus- And boron-doped silicon
    • Masetti G, Severi M, Solmi S. Modelling of carrier mobility against carrier concentration in arsenic-, phosphourus- and boron-doped silicon. IEEE Transactions Electron Devices 1983; 30: 764.
    • (1983) IEEE Transactions Electron Devices , vol.30 , pp. 764
    • Masetti, G.1    Severi, M.2    Solmi, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.