Very low voltage and stable p-i-n organic light-emitting diodes using a linear S,S-dioxide oligothiophene as emitting layer

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Mariano, F ^a   Mazzeo, M ^a   Duan, Y ^a   Barbarella, G ^b   Favaretto, L ^b   Carallo, S ^a   Cingolani, R ^a   Gigli, G ^a  

^a NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HEATING; LIGHT EMISSION; LIGHT EMITTING DIODES;

ACTIVE MATERIALS; AGING MEASUREMENTS; BI-LAYER STRUCTURES; DEVICE LIFETIMES; DEVICE STRUCTURES; EMITTING LAYERS; HIGH STABILITIES; INTRINSIC STABILITIES; MAXIMUM POWER; OLIGO THIOPHENES; OPERATING CONDITIONS; ORDERS OF MAGNITUDES; ORGANIC LIGHT-EMITTING DIODES; P-I-N STRUCTURES; POWER EFFICIENCIES; SELF-HEATING; TRANSPORT LAYERS; VERY LOW VOLTAGES;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 60349089592     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3072798     Document Type: Article

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