Diluted magnetic semiconductors based on II-VI, III-VI, and IV-VI compounds

Low Temperature Physics

Volumn 35, Issue 1, 2009, Pages 62-70

  Lashkarev, G V ^a   Sichkovskiyi, V I ^a   Radchenko, M V ^a   Karpina, V A ^a   Butorin, P E ^a   Dmitriev, O I ^a   Lazorenko, V I ^a   Slyn'Ko, E I ^a   Lytvyn, P M ^b   Jakiela, R ^c   Knoff, W ^c   Story, T ^c   Aleshkevych, P ^c  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETISM; COBALT; DILUTED MAGNETIC SEMICONDUCTORS; ELECTRON GAS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HYSTERESIS; HYSTERESIS LOOPS; II-VI SEMICONDUCTORS; IONS; MAGNETIC FIELDS; MAGNETIC MOMENTS; MAGNETIC SUSCEPTIBILITY; MANGANESE; NEUTRON DIFFRACTION; PHASE COMPOSITION; SOLUBILITY; SPIN GLASS; TEMPERATURE DISTRIBUTION; ZINC OXIDE;

ANTIFERROMAGNETIC INTERACTION; CHEMICAL AND PHASE COMPOSITIONS; FERROMAGNETIC CLUSTERS; FERROMAGNETIC ORDERINGS; INDIRECT EXCHANGE INTERACTIONS; NEUTRON DIFFRACTION DATA; SECOND PHASE INCLUSIONS; TEMPERATURE DEPENDENCE;

WIDE BAND GAP SEMICONDUCTORS;

EID: 60349083355     PISSN: 1063777X     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3064911     Document Type: Article

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