Stable tungsten disilicide contacts for surface and thin film resistivity measurements

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 180-183

  Jnawali, G ^a   Meyer Zu Heringdorf, F J ^a   Wall, D ^a   Sindermann, S ^a   Horn Von Hoegen, M ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONNECTORS; ELECTRIC SWITCHGEAR; ELECTRON DIFFRACTION; GRAPH THEORY; HIGH RESOLUTION ELECTRON MICROSCOPY; MICROMETERS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE DEFECTS; THICKNESS MEASUREMENT; TUNGSTEN; TUNGSTEN COMPOUNDS; VACUUM; VACUUM DEPOSITION;

ANNEALING CYCLES; FILM RESISTIVITIES; FLASH ANNEALING; HIGH RESOLUTIONS; HIGH TEMPERATURES; LOW-ENERGY ELECTRON DIFFRACTIONS; LOW-ENERGY ELECTRON MICROSCOPIES; RESISTANCE CURVES; SI(0 0 1); SILICIDATION; TUNGSTEN DISILICIDE; TWO-STEP PROCESS; ULTRAHIGH-VACUUM CONDITIONS;

SILICON;

EID: 59949085818     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3071851     Document Type: Article

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