Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 235-237

  Hajji, M ^a   Khardani, M ^a   Khedher, N ^a   Rahmouni, H ^b   Bessais B ^a   Ezzaouia, H ^a   Bouchriha, H ^c  

^a Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^c FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

Author keywords

Mesoporous silicon; Photo thermal annealing; Quasi monocrystalline silicon

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; OPTICAL PROPERTIES; PHOTOVOLTAIC EFFECTS; THERMAL EFFECTS; THIN FILMS;

ELECTROCHEMICAL ANODIZATION; MESOPOROUS SILICON; PHOTO-THERMAL ANNEALING; QUASI-MONOCRYSTALLINE SILICON;

POROUS SILICON;

EID: 33646545379     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.044     Document Type: Article

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