General argument supporting Bose-Einstein condensate of dark excitons in single and double quantum wells

Solid State Communications

Volumn 149, Issue 13-14, 2009, Pages 567-571

  Combescot, Monique ^a   Leuenberger, Michael N ^b  

^a INSTITUT DES NANOSCIENCES DE PARIS   (France)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

A. Quantum wells; A. Semiconductors; D. Optical properties; D. Phase transitions

Indexed keywords

BOSE-EINSTEIN CONDENSATION; CIVIL AVIATION; CONDENSATION; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRONS; EXCITONS; OPTICAL PROPERTIES; PHASE TRANSITIONS; PROGRAMMING THEORY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SPIN DYNAMICS; STEAM CONDENSERS; WELLS;

A. QUANTUM WELLS; A. SEMICONDUCTORS; BOSE- EINSTEIN CONDENSATES; COULOMB EXCHANGES; D. OPTICAL PROPERTIES; D. PHASE TRANSITIONS; DARK EXCITONS; DARK SPOTS; DOUBLE QUANTUM WELL STRUCTURES; DOUBLE QUANTUM WELLS; ELECTRON HOLES; ELECTRON-HOLE PAIRS; EXCHANGE PROCESS; EXCITON ENERGIES; FIELD THEORIES; HIGH DENSITIES; INTERBAND; PARABOLIC TRAPS; QUANTUM FIELD THEORIES; RING STRUCTURES; SEMICONDUCTOR PHYSICS; SHOW THROUGH; SPATIAL CONFIGURATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 59649093418     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.12.026     Document Type: Article

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