Mechanism of defect formation during low-temperature Si epitaxy on clean Si substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2415-2418

  Mizushima, Ichiro ^a   Koike, Mitsuo ^a   Sato, Tsutomu ^a   Miyano, Kiyotaka ^a   Tsunashima, Yoshitaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Defect; Epitaxy; Mound; Silicon; Twin

Indexed keywords

EID: 1142280116     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2415     Document Type: Article

References (8)

1. T. N. Neuyen, D. L. Harane, J. M. C. Stork, F. K. Legoues and B. S. Meyerson: Tech. Dig. Int. Electron Device Meet. (1986) p. 304.
2. T. Ohguro, H. Naruse, H. Sugaya, E. Morifuji, S. Nakamura, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata and H. Iwai: Tech. Dig. Int. Electron Device Meet. (1997) p. 837.
3. A. Ishitani, Y. Ohshita, K. Taniguchi, K. Takada and S. Itoh: J. Appl. Phys. 61 (1987) 2224.
4. H. Wakabayashi, T. Andoh, T. Mogami, T. Tatsumi and T. Kunio: Ext. Abstr. 1997 Int. Conf. Solid State Device and Materials (Business Center for Academic Societies Japan, Tokyo, 1997) p. 512.
5. B. S. Meyerson, E. Ganin, D. A. Smith and T. N. Nguyen: J. Electrochem. Soc. 133 (1986) 1232.
6. C. G. V. Walle: Mater. Res. Soc. Symp. Proc. 513 (1998) 55
7. J. Bloem: J. Cryst. Growth 18 (1973) 70.
8. S) T. Noma, T. Yonehara and H. Kumomi: Appl. Phys. Lett. 59 (1991) 653.