Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices

Analytical Sciences

Volumn 25, Issue 1, 2009, Pages 101-104

  Hirokane, Takaaki ^a   Hashimoto, Hideaki ^a   Kanzaki, Daisuke ^a   Urabe, Shinichi ^a   Arima, Kenta ^a   Uchikoshi, Junichi ^a   Morita, Mizuho ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR BOUNDARIES; PH; SEMICONDUCTOR INSULATOR BOUNDARIES; SOLUTION MINING;

CAPACITANCE VOLTAGE MEASUREMENTS; CAPACITANCE-VOLTAGE CURVE; FLAT-BAND VOLTAGE SHIFT; INSULATOR-SEMICONDUCTOR STRUCTURES; METAL INSULATORS; MOBILE IONIC CHARGE DENSITY; NEGATIVE VOLTAGE; SENSING DEVICES;

CAPACITANCE;

DNA; ION;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; EQUIPMENT DESIGN; METHODOLOGY; PH; SOLUTION AND SOLUBILITY;

DNA; ELECTROCHEMISTRY; EQUIPMENT DESIGN; HYDROGEN-ION CONCENTRATION; IONS; SOLUTIONS;

EID: 59449092387     PISSN: 09106340     EISSN: 13482246     Source Type: Journal    
DOI: 10.2116/analsci.25.101     Document Type: Article

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