Highly sensitive suspended-gate ion sensitive transistor for the detection of pH

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5836, Issue , 2005, Pages 433-440

  Bendriaa, F ^a   Le Bihan, F ^a   Salaun A C ^a   Mohammed Brahim, T ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Ion Sensitive Field Effect Transistor (ISFET); pH sensitivity; Polysilicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODES; PH EFFECTS; POLYSILICON; SENSITIVITY ANALYSIS; SILICON NITRIDE;

GATE ELECTRODES; NERNSTIAN SENSITIVITY; PH SENSITIVITY; SUSPENDED POLYSILICON GATE FIELD EFFECT TRANSISTORS (SGFET);

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 28344432585     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.607540     Document Type: Conference Paper

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