Tunneling current through ultrathin silicon dioxide films under light exposure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7857-7860

  Morita, Satoru ^a   Shinozaki, Akihito ^a   Morita, Yuuki ^a   Nishimura, Kazuo ^a   Okazaki, Tatsuya ^a   Urabe, Shinichi ^a   Morita, Mizuho ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Metal oxide semiconductor diode; Photo tunneling current; Preoxide; Silicon dioxide; Thermal oxide; Tunneling current; Ultrathin film

Indexed keywords

CLEANING; DIELECTRIC MATERIALS; DIODES; ELECTRON TUNNELING; MOS DEVICES; OXIDATION; PHOTOLITHOGRAPHY; QUARTZ; SILICA;

METAL-OXIDE-SEMICONDUCTOR DIODE; PHOTO-TUNNELING CURRENT; PREOXIDE; THERMAL OXIDATION; TUNNELING CURRENTS;

ULTRATHIN FILMS;

EID: 12844263461     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7857     Document Type: Conference Paper

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