Sensing of λDNA solutions by metal-gap-semiconductor devices

Surface and Interface Analysis

Volumn 40, Issue 6-7, 2008, Pages 1131-1133

  Hirokane, Takaaki ^a   Kanzaki, Daisuke ^a   Hashimoto, Hideaki ^a   Urabe, Shinichi ^a   Arima, Kenta ^a   Uchikoshi, Junichi ^a   Morita, Mizuho ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Capacitance Voltage characteristic; DNA solution; Flatband voltage shift; Metal gap semiconductor; Sensing device

Indexed keywords

ARSENIC COMPOUNDS; CAPACITANCE; CONCENTRATION (PROCESS); DNA; ELASTICITY; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GENES; HYSTERESIS; METALS; NUCLEIC ACIDS; ORGANIC ACIDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SENSORS; SOLUTIONS;

CAPACITANCE-VOLTAGE (C-V) CURVES; CAPACITANCE-VOLTAGE (C-V) MEASUREMENTS; CONCENTRATION (COMPOSITION); DNA CONCENTRATION; DNA SOLUTIONS; EMISSION OF ELECTRONS; FLATBAND VOLTAGE SHIFTING; NEGATIVE CHARGING; POSITIVE VOLTAGE;

SOLUTION MINING;

EID: 47749154416     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2824     Document Type: Conference Paper

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