Observation of resonant Raman lines during the photoluminescence of doped GaN

Semiconductor Science and Technology

Volumn 12, Issue 1, 1997, Pages 55-58

  Dewsnip, D J ^a   Andrianov, A V ^a   Harrison, I ^a   Lacklison, D E ^a   Orton, J W ^a   Morgan, J ^a   Ren, G B ^a   Cheng, T S ^a   Hooper, S E ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CARBON; ENERGY GAP; LASERS; MAGNESIUM; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR DOPING;

HELIUM CADMIUM LASER; OPTICAL EXCITATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030644129     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/1/011     Document Type: Article

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