SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 361-366

Investigation of field-effect transistors fabricated by metal-ion-doped nano-titania using sol-gel technique

(2) Liau, Leo Chau Kuang a Chou, Wen Wei a

a YUAN ZE UNIVERSITY (Taiwan)

Author keywords

Field effect transistor; Metal ion doped TiO2; Semiconductor diode; Sol gel method

Indexed keywords

COLLOIDS; DIODES; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; FABRICATION; GELATION; GELS; IONS; MESFET DEVICES; METAL IONS; METALS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SOL-GEL PROCESS; SOL-GELS; SOLS; TITANIUM DIOXIDE; TITANIUM OXIDES; TRANSISTORS;

FIELD EFFECT TRANSISTOR; GATE VOLTAGES; INFLUENTIAL FACTORS; METAL-ION-DOPED TIO2; NANO-TITANIA; SEMICONDUCTOR DIODE; SOL-GEL METHOD; SOL-GEL TECHNIQUES; SOURCE-DRAIN CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 59349092995 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2008.11.013 Document Type: Article

Times cited : (8)

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